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10-FY064PA075SG-M583F08 flowpack 1 h 650v/75a low inductive 12mm flow1 package h-bridge topology high-speed igbt + ultrafast fwd temperature sensor solar inverter power supply inverter based welding 10-FY064PA075SG-M583F08 t j =25c, unless otherwise specified parameter symbol value unit h-bridge igbt t h =80c 53 t c =80c 71 t h =80c 93 t c =80c 141 t sc t j 150c 5 s v cc v ge =15v 400 v h-bridge fwd t h =80c 42 t c =80c 55 t h =80c 70 t c =80c 106 225 20 225 t j =t j max t p limited by t j max dc forward current p tot gate-emitter peak voltage t j =t j max a i f v rrm t j =25c a types maximum ratings condition features flowpack 1 h target applications schematic w 175 c pulsed collector current maximum junction temperature peak repetitive reverse voltage power dissipation per igbt maximum junction temperature short circuit ratings turn off safe operating area repetitive peak forward current power dissipation per diode collector-emitter break down voltage dc collector current t j =t j max t j =t j max vce 650v, tj top max t p limited by t j max a 650 a v 150 v t j max v ce i dc v ge i frm p tot i cpulse t j max w av 650 c 175 copyright vincotech 1 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm cti >200 comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition clearance -40+(tjmax - 25) c storage temperature t stg -40+125 c copyright vincotech 2 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 4,2 5,1 5,6 tj=150c tj=25c 1,38 1,72 2,5 tj=150c 1,97 tj=25c 15 tj=150c tj=25c 150 tj=150c tj=25c 85 tj=150c 87 tj=25c 14 tj=150c 17 tj=25c 125 tj=150c 147 tj=25c 18 tj=150c 31 tj=25c 0,51 tj=150c 0,9 tj=25c 0,66 tj=150c 1,17 tj=25c 2,4 3 tj=125c 1,9 tj=25c 63 tj=150c 82 tj=25c 17 tj=150c 94 tj=25c 0,96 tj=150c 2,94 di(rec)max tj=25c 15698 /dt tj=150c 5163 tj=25c 0,13 tj=150c 0,54 tj=25c ua ? pf mws ns ns a nc na k/w v v tj=25c t=25c t=100c t=25c 137 rgon=4 ? thermistor ? r/r r100=1486 ? rated resistance r power dissipation constant deviation of r25 mw/k power dissipation p mw 300 300 75 0,0012 25 0 480 75 650 collector-emitter saturation voltage collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current reverse recovery time reverse recovered energy peak rate of fall of recovery current thermal resistance chip to heatsink per chip turn-on energy loss per pulse reverse recovered charge h-bridge fwd peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge c ies 15 75 75 15 rgon=4 ? 0 20 15 rgoff=4 ? f=1mhz mws a/s k/w c characteristic values value conditions input capacitance turn-off energy loss per pulse integrated gate resistor h-bridge igbt gate emitter threshold voltage v ge(th) v ce(sat) i ces r gint i ges t f e on e off t d(on) i rrm v f erec c rss q rr t rr r thjh q gate t r t d(off) v ce =v ge thermal grease thickness 50um = 1 w/mk 0 15 2 200 5 -5 % ? 22000 50 v none tj=25c 470 4620 thermal grease thickness 50um = 1 w/mk b-value b (25/50) tol. 3% tj=25c 3950 k b (25/100) tj=25c 3996 k b-value tol. 3% vincotech ntc reference b thermal resistance chip to heatsink per chip 1,02 r thjh 1,36 copyright vincotech 3 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 50 100 150 200 250 0 1 2 3 4 5 v ce (v) i c (a) 0 15 30 45 60 75 0 1 2 3 4 5 6 7 8 9 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 40 80 120 160 200 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 50 100 150 200 250 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 4 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a r goff = 4 ? figure 7 output inverter fwd figure 8 output inverter fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a output inverter e on high t e off high t e on low t e off low t 0 1 2 3 4 5 0 25 50 75 100 125 150 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 8 16 24 32 40 r g ( w ) e (mws) t j = t jmax -25c t j = 25c e rec 0 0,2 0,4 0,6 0,8 0 25 50 75 100 125 150 i c (a) e (mws) t j = t jmax -25c e rec t j = 25c e rec 0 0,2 0,4 0,6 0,8 0 8 16 24 32 40 r g ( w ) e (mws) copyright vincotech 5 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a r goff = 4 ? figure 11 output inverter fwd figure 12 output inverter fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v output inverter t doff t f t don t r 0,00 0,01 0,10 1,00 0 25 50 75 100 125 150 i c (a) t ( m s) t j = t jmax -25c t rr t j = 25c t rr 0,00 0,05 0,10 0,15 0,20 0,25 0,30 0 8 16 24 32 40 r g on ( w ww w ) t rr ( m s) t doff t f t don t r 0,00 0,01 0,10 1,00 0 8 16 24 32 40 r g ( w ww w ) t ( m s) t j = t jmax -25c t rr t rr t j = 25c 0,00 0,02 0,04 0,06 0,08 0,10 0,12 0 25 50 75 100 125 150 i c (a) t rr ( m s) copyright vincotech 6 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 13 output inverter fwd figure 14 output inverter fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v figure 15 output inverter fwd figure 16 output inverter fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v output inverter t j = t jmax - 25c i rrm t j = 25c i rrm 0 25 50 75 100 125 0 8 16 24 32 40 r gon ( w ww w ) i rrm (a) t j = t jmax -25c q rr t j = 25c q rr 0 0,8 1,6 2,4 3,2 4 0 8 16 24 32 40 r g on ( w ) q rr ( m c) t j = t jmax -25c t j = 25c i rrm 0 20 40 60 80 100 0 25 50 75 100 125 150 i c (a) i rrm (a) t j = t jmax -25c t j = 25c q rr 0 0,8 1,6 2,4 3,2 4 0 25 50 75 100 125 150 i c (a) q rr ( m c) copyright vincotech 7 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 17 output inverter fwd figure 18 output inverter fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(i c ) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,02 k/w 0,87 r thjh = 1,36 k/w 1,16 igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) r (c/w) ta u (s) 0,20 9,7e-01 0,17 8,2e-01 0,09 3,0e+00 0,07 2,5e+00 0,49 2,1e-01 0,42 1,8e-01 0,40 3,3e-01 0,34 2,8e-01 0,19 6,2e-02 0,16 5,2e-02 0,49 9,8e-02 0,41 8,3e-02 0,11 1,4e-02 0,09 1,2e-02 0,22 1,7e-02 0,19 1,5e-02 0,03 1,7e-03 0,03 1,4e-03 0,10 3,2e-03 0,09 2,8e-03 0,06 6,7e-04 0,05 5,7e-04 output inverter thermal grease phase change interface thermal grease p hase change interface t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z th-jh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di rec /dt di rec /dt high t 0 5000 10000 15000 20000 25000 0 8 16 24 32 40 r gon ( w ww w ) di rec / dt (a/ m s) di o /dt low t di 0 /dt high t di 0 /dt di rec /dt low t di 0 /dt high t di rec /dt high t di rec /dt low t di o /dt low t 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 25 50 75 100 125 150 i c (a) di rec / dt (a/ m m m m s) di rec /dt di 0 /dt copyright vincotech 8 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 output inverter fwd figure 24 output inverter fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 175 c t j = 175 c output inverter 0 40 80 120 160 200 0 50 100 150 200 t h ( o c) p tot (w) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) i c (a) 0 30 60 90 120 150 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 9 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q ge ) at at d = single pulse i c = 75 a t h = 80 oc v ge = 15 v t j = t jmax oc figure 27 output inverter igbt figure 28 output inverter igbt short circuit withstand time as a function of typica l short circuit collector current as a function of gate-emitter voltage gate-emitter voltage t sc = f(v ge ) v ge = f(q ge ) at at v ce = 400 v v ce 400 v t j 150 oc t j = 150 oc output inverter v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 q g (nc) v ge (v) 120v 480v 0 1 2 3 4 5 6 7 8 9 10 12 13 14 15 16 17 18 19 20 v ge (v) t sc (s) 0 200 400 600 800 1000 1200 1400 12 13 14 15 16 17 18 19 20 v ge (v) i c (sc) copyright vincotech 10 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 29 igbt reverse bias safe operating area i c = f(v ce ) at t j = t jmax -25 oc switching mode : 3phase spwm figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 25 45 65 85 105 125 t (c) r/ ? [ ] w = ? ?? ? ? ?? ? ? ?? ? ? ?? ? - 25 100/25 11 25 )( tt b e r tr 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 0 100 200 300 400 500 600 700 v ce (v) i c (a) i c max v ce max i c module i c chip copyright vincotech 11 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 t j 150 c r gon 8 ? r goff 8 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of tdon, t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 75 a i c (100%) = 75 a t doff = 0,21 s t don = 0,14 s t eoff = 0,40 s t eon = 0,30 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 75 a i c (100%) = 75 a t f = 0,03 s t r = 0,03 s switching definitions output inverter general conditions == = i c 1% v ce 90% v ge 90% -20 0 20 40 60 80 100 120 140 -0,2 -0,05 0,1 0,25 0,4 0,55 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -25 0 25 50 75 100 125 150 175 200 2,7 2,9 3,1 3,3 3,5 3,7 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,1 0,15 0,2 0,25 0,3 time (us) % v ce i c t f i c10% i c90% -25 0 25 50 75 100 125 150 175 200 3 3,1 3,2 3,3 3,4 time(us) % t r v ce i c copyright vincotech 12 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 22,61 kw p on (100%) = 22,61 kw e off (100%) = 1,15 mj e on (100%) = 1,52 mj t eoff = 0,40 s t eon = 0,30 s figure 7 output inverter igbt turn-off switching waveforms & definition of t rr v d (100%) = 300 v i d (100%) = 75 a i rrm (100%) = -57 a t rr = 0,11 s switching definitions output inverter i c 1% v ge 90% -20 0 20 40 60 80 100 120 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 time (us) % p off e off t eoff v ce 3% v ge 10% -20 0 20 40 60 80 100 120 140 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -120 -80 -40 0 40 80 120 3 3,1 3,2 3,3 3,4 3,5 time(us) % i d v d fitted copyright vincotech 13 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 figure 8 output inverter fwd figure 9 output inverter fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 75 a p rec (100%) = 22,61 kw q rr (100%) = 2,94 c e rec (100%) = 0,50 mj t qrr = 0,21 s t erec = 0,21 s switching definitions output inverter t qrr -100 -50 0 50 100 150 3 3,1 3,2 3,3 3,4 3,5 3,6 % i d q rr time(us) -20 0 20 40 60 80 100 120 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) % p rec e rec t erec copyright vincotech 14 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 version ordering code in datamatrix as in packaging barcode a s without thermal paste 12mm housing 10-fy064pa075sg- m583f08 m583f08 m583f08 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 15 revision: 1 free datasheet http:///
10-FY064PA075SG-M583F08 disclaimer life support policy as used herein: the information given in this datasheet describes t he type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the applicatio n or use of any product or circuit described herein; neither does it convey any licens e under its patent rights, nor the rights of others . vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or sys tem, or to affect its safety or effectiveness. copyright vincotech 16 revision: 1 free datasheet http:///

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